Silicon Carbide Amorphization by Electron Irradiation
نویسندگان
چکیده
منابع مشابه
Irradiation-induced defect clustering and amorphization in silicon carbide
Previous computer simulations of multiple 10 keV Si cascades in 3C–SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, r...
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Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force...
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Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic cou...
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We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressur...
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Silicon carbide (SiC) possesses excellent radiation tolerance, thus, SiC and its composites are promising materials for current and future nuclear systems [1]. However, the atomistic processes that underlie the irradiation response are not sufficiently understood, due largely to the limited spatial resolution of conventional analytical tools. Comparing aberration-corrected scanning transmission...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 1998
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927600023618